, o ne. 10 stern ave. springfield, new jersey 07081 j.s.a. silicon pnp darlington power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 TIP146T description ? high dc current gain- : hfe=1000(min)@lc=-5a ? collector-emitter sustaining voltage- : vceo(sus) = -sov(min) ? complement to type tip141t applications ? designed for general purpose amplifier and low frequency switching applications. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current- continuous collector power dissipation @tc=25c junction temperature storage temperature range value -80 -80 -5 -10 -15 -0.5 80 150 -55-150 unit v v v a a a w ?c -c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 1.56 unit 'cm/ - -n ?2 {?? n k... i mm l jiif m ? v v <-vw ' * ' iv." ^?~ v y tj r ^" 1 3 j j pin 1.base i |_ j 2. collector , 2 o s.artltter to-220c package tjoj a v l ?????? b m ?*- v?h ,'-" 3~g/ l ;t' * _h 1 . k 1 i -h c i cl mi g }?- t i j dw a b c d f g h j k l 0 r s li v r t mm win 15.70 0.00 4.20 0.70 3.40 4.08 2.70 0.44 13.20 1.10 2.70 2.50 1.20 6.45 8.66 max 15.00 10.10 4.40 0.00 3.60 5.18 2.00 0.46 13.40 1.30 2.00 2.70 1.31 6.65 8.86 x ? -poo -k j nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp darlington power transistor TIP146T electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat)-i vce(sat)-2 vee(sat) v be(on) icbo iceo iebo hpe-1 hfe-2 parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain conditions lc= -30ma, ib= 0 lc=-5a,lb=-10ma lc=-10a,lb=-40ma lc=-10a,lb=-40ma lc=-10a;vce=-4v vcb= -80v, ie= 0 vce= -40v, ib= 0 veb= -5v; lc= 0 lc= -5a; vce= -4v lc=-10a; vce=-4v min -80 1000 500 typ. max -2.0 -3.0 -3.5 -3.0 -1 -2 -2 unit v v v v v ma ma ma switching times td tr tstg tf delay time rise time storage time fall time vcc=-30v, ic=-5.0a, lai= -is2 = -20 rna; tp= 20 u s duty cycle==20% 0.15 0.55 2.5 2.5 u s us u s m s
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